样品照片:
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不同生长方法样品区别:
HRTEM:
Description: World's first molecular beam epitaxy (MBE) grown MoS2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or metal-organic chemical vapor deposition (MOCVD) techniques (see HRTEM images below). MBE growth of MoS2 monolayers take place in a MBE chamber at a base pressure of 8E-9 Torr and deposition rate is extremely slow (5-100 atoms per second) to reach structural perfection. Typical MBE growth produces monolayer thick MoS2 isolated triangles on double-side polished c-cut sapphire. Currently, MBE MoS2 is only offered on sapphire substrates but in the near future our MBE substrates will also include mica, graphite, and gold. Sample Properties: Sample size:1cm x 1cm square shaped Substrate type:Double side polished c-cut sapphire Coverage:Isolated triangles but may reach some continuity Electrical properties:Direct gap excitonic semiconductor Crystal structure:Hexagonal Phase Unit cell parameters:a = b = 0.33 nm, c = 1.292 nm, α = β = 90°, γ = 120° Production methodMolecular beam epitaxy (MBE) Characterization methods:Raman, photoluminescence, TEM, XRD, and others
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