货号 |
编号 |
参数 |
库存 |
价格 |
100048 |
MK115 |
8 mm*8 mm |
100 |
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产品照片: A high-quality epitaxial monolayer graphene is fabricated on Si-face of semi-insulating, transparent {0001} 4H-SiC substrates via solid-state graphitization. During the sublimation process, a specific buffer layer that has a distorted graphene-like structure forms between the graphene film and the underlying SiC substrate. Both the substrate and the buffer layer influence the electronic properties, resulting in intrinsic n-doping of the epitaxially grown monolayer graphene. Note: Graphene side is facing up in the box. Take precaution while handling the sample to avoid any damage to the film.Key Features:Excellent carrier mobility Controlled growth of Graphene layers Better purity of the samples Potential scalable method for graphene fabrication 样品参数: 衬底参数:
样品表征: Raman:
透过:
霍尔效应测试:
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