| 货号 |
编号 |
参数 |
库存 |
价格 |
| 100844 |
MK10844 |
~3mm-5mm |
100 |
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| 样品名称 | 铜铬铟硫晶体CuCrIn2S6 | | 性质 | 铁磁材料 | | 带隙 | 1.0 eV 到 1.4 eV | | 参数 | 尺寸：~3mm-5mm晶体 | | 应用 | 半导体电子器件，传感器-探测器，非线性光学，STM-AFM实验，光学器件等研究 | | 其他信息 | 详情请发邮件至：mknano@126.com |
铜铬铟硫晶体CuCrIn2S6照片： 
XRD： 
Overall properties of CuCrIn2S6 crystals 
Product Description CuCrIn2S6 is a layered material that exhibits ferromagnetic and ferroelectric (overall multiferroic) order in the monolayer limit[ 1]. CuCrIn2S6 consists of a chalcogenide (sulfur) framework with the octahedral sites filled by Cu, Cr, and P–P in a triangular pattern. It has been predicted that these material exhibit band gap values ranging from 1.0 eV to 1.4 eV in the monolayer form. Our CuCrIn2S6 crystals has been primary grown by flux zone growth technique which is free of any transporting agents, and thus flux zone grown crystals are crystallized better and contains less far less defects compared to chemical vapor transport (CVT) grown materials. By default our R&D team will ship flux grown samples but we can offer lower grade CVT grown samples on-demand.
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