货号 |
编号 |
参数 |
库存 |
价格 |
100928 |
MK10928 |
~7-10mm |
100 |
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晶体照片: XRD:
结构模型图:
n-type GaSeOur n-type GaSe crystals are grown using Bridgman growth technique and the crystal were doped to n-type using Sn atoms at around 1E18cm-3 range. N-type GaSe crystals exhibit highly layered characteristics and are ideal for exfoliation, device fabrication, optics, and other optoelectronics related experiments. The physical properties of n-type GaSe crystals Sample size | Around 5mm in size | Properties | Direct gap semiconductor | Exfoliation characteristics | Very easy | Production method | Bridgman growth technique (Sn dopant)
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